polycrystalline silicon accumulation/depletion/inversion model with implicit/explicit
S. B. Chiah, X. Zhou, K. Chandrasekaran, W. Z. Shangguan,
G. H. See, and S. M. Pandey
Applied Physics Letters,
Vol. 86, No. 20, 202111, 16 May 2005
(Manuscript received 30 November 2004; accepted
28 March 2005; published online 11 May 2005.)
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A single-piece analytical equation for the surface potential at the
polycrystalline-silicon (poly-Si) gate of a MOSFET is presented, which
accounts for the poly-accumulation, poly-depletion, and poly-inversion
effects. It is shown that the model accurately describes the physical
behavior of the surface potentials, gate charge and capacitance, with smooth
transitions, which has been verified with iterative, explicit, and numerical
solutions. The proposed model can be used in implicit or explicit
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