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Biography
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D. H. Zhang received M.S degree from Shandong University, China, and Ph.D. degree from the University of New South Wales, Australia. He joined the School of Electrical and Electronic Engineering, Nanyang Technological University as a lecturer in 1991 and was promoted to Senior Lecturer in 1995 and Associate Professor in 1999. Before this, he worked as a Postdoctoral Research Associate in School of Physics, the University of New South Wales. He has authored and co-authored over 90 journal papers, presented over 110 conference papers and filed one patent in the United States of America. He is a Faulty Associate of Institute of Microelectronics, Singapore, a senior member of IEEE since 1997 and a guest editor of the international journal, Thin Solid Films. He has been the reviewer for a number of international journals, such as Applied Physics Letters, Journal of Applied Physics, IEEE Journal of Quantum Electrons, J. Crystal Growth, and Thin Solid Films.
Research Interest
Semiconductor materials, devices and physics; Quantum well, wire and dot structures, devices and arrays; New nano-scaled materials and devices for low and room temperature infrared detection.
Selected Research Projects
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Development of InSbN alloys and other dilute nitrides for infrared photodetion.
- Nano scale Si/SiGe quantum well/wire/dot structures and their applications.
- Carbon nanotube wire and array and their applications.
Selected Publications
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W. Liu, D. H. Zhang, W. J. Fan, J. H. Zhao, X. H. Tang and S. F. Yoon, “Variation of intersubband transitions in nano-scale conduction-band quantum wells”, submitted to IEEE Journal of Quantum Electronics.
- D. H. Zhang, W. Liu, L. Sun, W. J. Fan, S. F. Yoon and S. Z. Wang, “Transverse electric dominant intersubband transition in Si-doped GaInAsN/GaAs quantum wells”, Journal of Applied Physics, 99, 043514(1- 4), 2006.
- Y.L. Yong, D. H. Zhang, C.Y. Li, S.Y. Wu, P.D. Foo, "Improving electrical performance of Cu/porous ultra-low k dielectrics single damascene lines", Electronics Letters, 40 (12), 729-730, 2004.
- L. Sun, D. H. Zhang, "Study of InGaAsP/InP multiple quantum well grown by solid source molecular beam epita xy", Journal of Vacuum Science and Technology, B21, 1940-1944, 2003.
- W. Shi, D. H. Zhang, T. Osotchan, "Si x-band approach to the effects of doping on energy dispersion in p-type strained In0.15Ga0.85As/Al0.33Ga0.67As quantum well structures", IEEE Journal of Quantum Electronics, 36 (7), 2000.
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